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Electrical responses of a carbon nanotube thin-film transistor to MeV proton irradiation in air.
https://repo.qst.go.jp/records/77375
https://repo.qst.go.jp/records/7737526902b95-22c4-4e5d-89a2-63503338f1f7
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2019-09-16 | |||||
| タイトル | ||||||
| タイトル | Electrical responses of a carbon nanotube thin-film transistor to MeV proton irradiation in air. | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Ishii, Satoshi
× Ishii, Satoshi× Toki, Junpei× Oikawa, Masakazu× Ohsawa, Daisuke× Konishi, Teruaki× Oikawa, Masakazu× Ohsawa, Daisuke× Konishi, Teruaki |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | We used protons with incident energy of 3.30 MeV to irradiate a carbon nanotube thin-film transistor (CNTTFT) to study its electrical response in air environment. The drain current (ID) was monitored by applying a constant gate voltage (VGS) to the CNTTFT; proton irradiation was turned on and off at a beam intensity of 50,000 cps. ID increased at a negative VGS of −20 V and decreased at a positive VGS of +10 V during proton irradiation. For both VGS values, ID began to recover after proton irradiation. According to the calculations for the energy loss of protons, the incident protons deposited their energy on the CNTTFT. Micro-Raman analysis revealed that no structural change in the CNT was caused by the incident protons. The reversible electrical responses of the CNTTFT to proton irradiation should be applicable to the detection and dosimetry of MeV incident protons in air. | |||||
| 書誌情報 |
Radiation Effects and Defects in Solids 巻 175, 号 5-6, p. 440-449, 発行日 2019-09 |
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| 出版者 | ||||||
| 出版者 | Taylor & Francis | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 1042-0150 | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1080/10420150.2019.1671386 | |||||
| 関連サイト | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | https://doi.org/10.1080/10420150.2019.1671386 | |||||
