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Radiation Hardness of 4H-SiC JFETs in MGy Dose Ranges
https://repo.qst.go.jp/records/77085
https://repo.qst.go.jp/records/7708540be578b-9c33-42e2-8bbf-620f2ea97466
| Item type | 会議発表用資料 / Presentation(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2019-10-07 | |||||
| タイトル | ||||||
| タイトル | Radiation Hardness of 4H-SiC JFETs in MGy Dose Ranges | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_c94f | |||||
| 資源タイプ | conference object | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Takeyama, Akinori
× Takeyama, Akinori× Shimizu, Keigo× Makino, Takahiro× Yamazaki, Yuichi× Shin-ichiro, Kuroki× Tanaka, Yasunori× Ohshima, Takeshi× Takeyama, Akinori× Makino, Takahiro× Yamazaki, Yuichi× Ohshima, Takeshi |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Silicon carbide junction field effect transistors (SiC JFETs) were irradiated with gamma-rays up to 9 MGy (H2O). With increasing dose, apparent shift of drain current- gate voltage (ID-VG) curves to negative voltage side as observed for SiC metal oxide semiconductor (MOS) FETs did not take place. No significant difference is observed between drain and gate leakage currents of irradiated JFETs. This strongly indicates that defects as leakage paths were introduced into not bulk region but the interface between bulk and the passivation layer of SiO2. While, the transfer characteristics including threshold voltage and transconductance were slightly changed compared with the pristine sample. After drain voltage (VD) was abruptly applied to 6 V, ID at VG= 0 V increased slowly as a function of time. This indicates that variation of transfer characteristics is attributed to capture and emission process at defects generated in channel region. | |||||
| 会議概要（会議名, 開催地, 会期, 主催者等） | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | International Conference on Silicon Carbide and Related Materials (ICSCRM2019) | |||||
| 発表年月日 | ||||||
| 日付 | 2019-10-03 | |||||
| 日付タイプ | Issued | |||||
