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Creation of Color Centers in SiC PN Diodes Using Proton Beam Writing
https://repo.qst.go.jp/records/76264
https://repo.qst.go.jp/records/762646e7f2a1e-e7bd-44e1-ad75-4982d6f9793e
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2019-07-10 | |||||
| タイトル | ||||||
| タイトル | Creation of Color Centers in SiC PN Diodes Using Proton Beam Writing | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Yamazaki, Yuichi
× Yamazaki, Yuichi× Chiba, Yoji× Makino, Takahiro× Sato, Shinichiro× Yamada, Naoto× Sato, Takahiro× Kojima, Kazutoshi× Sang-Yun, Lee× Hijikata, Yasuto× Ohshima, Takeshi× Yamazaki, Yuichi× Chiba, Yoji× Makino, Takahiro× Sato, Shinichiro× Yamada, Naoto× Sato, Takahiro× Ohshima, Takeshi |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | We demonstrated that silicon vacancy (VSi) can be created in SiC pn junction diode by proton beam writing (PBW) without degradation of the diode performance. The VSi showed the same specific emission for both optically and electrically excitation, which suggests that electrically controllable VSi was created. In addition, optically detected magnetic resonance (ODMR) signal was successfully detected from optically excited VSi at room temperature. This result suggests that VSi introduced into the device by PBW still maintain spin manipulating capability, which is an important step toward realizing SiC devices internally equipped with a VSi-based quantum sensor. | |||||
| 書誌情報 |
Materials Science Forum 巻 963, p. 709-713, 発行日 2019-07 |
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| 出版者 | ||||||
| 出版者 | Trans Tech Publications | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 1662-9752 | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.4028/www.scientific.net/MSF.963.709 | |||||
