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Non-destructive chemical depth profiling for thin film and buried interface by high-energy synchrotron radiation XPS and XAS
https://repo.qst.go.jp/records/76246
https://repo.qst.go.jp/records/76246b302670b-c2f4-4c01-927e-023633f1d174
| Item type | 会議発表用資料 / Presentation(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2019-05-16 | |||||
| タイトル | ||||||
| タイトル | Non-destructive chemical depth profiling for thin film and buried interface by high-energy synchrotron radiation XPS and XAS | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_c94f | |||||
| 資源タイプ | conference object | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
山本, 博之
× 山本, 博之× 江坂, 文孝× Yamamoto, Hiroyuki |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Non-destructive depth profile analysis with better depth resolution is required for characterization of nano-materials. Sputter etching is commonly used for conventional way of depth profiling. However, it makes damages because of atomic mixing and surface roughening. X-ray photoelectron spectroscopy (XPS) is typically non-destructive analysis, however, XPS with fixed excitation energy source cannot provide depth profile without additional technique. On the other hand, analyzing depth of XPS can be varied with energy tunable excitation source, such as synchrotron-radiation (SR), since escape depth of photoelectrons depends on their kinetic energy. We can obtain XPS spectra from different analyzing depth by varying excitation energy. This technique can provide depth profile non-destructively. We also examined a method to perform depth profiling with X-ray absorption spectroscopy (XAS) by changing electron energies for detection ranging from 5 to 50 eV using electron spectrometer (partial electron yield detection). In the present study, Ge (2~4 nm) and Au (1~10 nm) thin films on Si(100) have been analyzed. The measurements have been performed at KEK-PF, Tsukuba using 1.8~3.7 keV X-ray. XPS spectra clearly show the interface under the deposited films can be observed even for the 4 nm Ge sample. Chemical state changes at the interface by the two substrates are also clearly observed. From XAS analysis, obvious correlation between Si/Au ratios and the electron energies are observed. These results suggest that SR-XPS and XAS are powerful technique for non-destructive chemical depth profiling of surface and buried interface. | |||||
| 会議概要（会議名, 開催地, 会期, 主催者等） | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | 17th International Conference on Surface Science/ 21st International Vacuum Congress | |||||
| 発表年月日 | ||||||
| 日付 | 2019-07-04 | |||||
| 日付タイプ | Issued | |||||
