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Advances in Ga2O3 MOSFETs for power switching and beyond
https://repo.qst.go.jp/records/75595
https://repo.qst.go.jp/records/755958e3ed8ff-7b00-445d-a004-cc379685150f
| Item type | 会議発表用資料 / Presentation(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2019-04-12 | |||||
| タイトル | ||||||
| タイトル | Advances in Ga2O3 MOSFETs for power switching and beyond | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_c94f | |||||
| 資源タイプ | conference object | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Higashiwaki, Masataka
× Higashiwaki, Masataka× Hoi Wong, Man× Kamimura, Takafumi× Nakata, Yoshiaki× Chia-Hung, Lin× Takeyama, Akinori× Makino, Takahiro× Ohshima, Takeshi× Singh, Manikant× Pomeroy, James× Uren, Michael× Casbon, Michael× Tasker, Paul× Goto, Ken× Sasaki, Kohei× Kuramata, Akito× Yamakoshi, Shigenobu× Kuball, Martin× Murakami, Hisashi× Kumagai, Yoshinao× Takeyama, Akinori× Makino, Takahiro× Ohshima, Takeshi |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Ga2O3 has emerged as a noteworthy ultrawide bandgap semiconductor in the past five years. Owing to excellent material properties based on an extremely large bandgap of over 4.5 eV and the commercial availability of native wafers produced from melt-grown bulk single crystals, Ga2O3-based electronic devices are promising candidates for various applications in power switching, RF, and harsh-environment electronics. First, this presentation will give an overview of our state-of-the-art lateral depletion-mode (D-mode) Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs). The devices demonstrated an off-state breakdown voltage of over 750 V, a drain current on/off ratio of more than nine orders of magnitude, stable device operation at temperatures up to 300°C, and negligibly small DC–RF dispersion. Furthermore, the bulk Ga2O3 channel exhibited strong gamma-ray tolerance by virtue of showing very little on-resistance degradation and threshold voltage shift, thereby demonstrating the strong potential of Ga2O3 devices for radiation-hard electronics. We will also present RF and thermal characteristics of the lateral MOSFETs. In the second part, we will discuss our recent developments of vertical D-mode Ga2O3 MOSFETs. The devices had a current blocking layer formed by Mg- or N-ion implantation and successfully demonstrated drain current modulation by an applied gate bias. However, the devices were still at a primitive development stage and had some severe issues to be resolved. |
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| 会議概要（会議名, 開催地, 会期, 主催者等） | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | MRS Fall Meeting & Exhibit | |||||
| 発表年月日 | ||||||
| 日付 | 2018-11-26 | |||||
| 日付タイプ | Issued | |||||
