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Single-Event Damage observed in GaN-on-Si HEMTs
https://repo.qst.go.jp/records/74708
https://repo.qst.go.jp/records/74708fe42492c-00a6-4108-b969-381b487aa49e
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2019-03-13 | |||||
| タイトル | ||||||
| タイトル | Single-Event Damage observed in GaN-on-Si HEMTs | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
水田, 栄一
× 水田, 栄一× 久保山, 智司× 仲田, 祐希× Takeyama, A.× Ohshima, T.× 岩田, 佳之× Suzuki, K.× Mizuta, Eiichi× Kuboyama, Satoshi× Nakada, Yuki× Iwata, Yoshiyuki |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Abstract—The single-event damage observed in AlGaN/GaN high-electron mobility transistors (HEMTs) was investigated. For power control applications, normally off operation is achieved by p-type GaN gate material and its rated drain–source voltage of 600 V. Because of no gate insulator, single-event gate rupture is essentially excluded. Therefore, the HEMTs are expected to exhibit better immunity to heavy ions in comparison with SiC power MOSFETs. In the test results, two types of catastrophic failure modes were observed with different leakage current paths; one failure mode was caused by the introduction of a leakage current path between the drain and Si substrate via the buffer layer. The other was caused by the damage between the drain and source electrodes. | |||||
| 書誌情報 |
IEEE Transactions on Nuclear Science 巻 65, 号 8, p. 1956-1963, 発行日 2018-08 |
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| 出版者 | ||||||
| 出版者 | IEEE | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1109/TNS.2018.2819990 | |||||
