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Advances in Ga2O3 MOSFETs for Power and Radiation-Hard Electronics

https://repo.qst.go.jp/records/73315
https://repo.qst.go.jp/records/73315
3f74287b-e5e7-44b7-a871-afd5607b929e
Item type 会議発表用資料 / Presentation(1)
公開日 2018-03-19
タイトル
タイトル Advances in Ga2O3 MOSFETs for Power and Radiation-Hard Electronics
言語
言語 jpn
資源タイプ
資源タイプ識別子 http://purl.org/coar/resource_type/c_c94f
資源タイプ conference object
アクセス権
アクセス権 metadata only access
アクセス権URI http://purl.org/coar/access_right/c_14cb
著者 Hoi, Wong Man

× Hoi, Wong Man

WEKO 722383

Hoi, Wong Man

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Nakata, Y.

× Nakata, Y.

WEKO 722384

Nakata, Y.

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Lin, C.H.

× Lin, C.H.

WEKO 722385

Lin, C.H.

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Morikawa, Y.

× Morikawa, Y.

WEKO 722386

Morikawa, Y.

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Sasaki, K.

× Sasaki, K.

WEKO 722387

Sasaki, K.

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Goto, K.

× Goto, K.

WEKO 722388

Goto, K.

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武山, 昭憲

× 武山, 昭憲

WEKO 722389

武山, 昭憲

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牧野, 高紘

× 牧野, 高紘

WEKO 722390

牧野, 高紘

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大島, 武

× 大島, 武

WEKO 722391

大島, 武

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Murakami, H.

× Murakami, H.

WEKO 722392

Murakami, H.

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Kumagai, Y.

× Kumagai, Y.

WEKO 722393

Kumagai, Y.

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Kuramata, A.

× Kuramata, A.

WEKO 722394

Kuramata, A.

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Yamakoshi, S.

× Yamakoshi, S.

WEKO 722395

Yamakoshi, S.

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武山 昭憲

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WEKO 722396

en 武山 昭憲

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牧野 高紘

× 牧野 高紘

WEKO 722397

en 牧野 高紘

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大島 武

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WEKO 722398

en 大島 武

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抄録
内容記述タイプ Abstract
内容記述 β-Ga2O3 is being actively pursued for power switching and harsh environment electronics. State-of-the-art Ga2O3 MOSFETs were realized on unintentionally-doped (UID) β-Ga2O3 (010) epilayers by employing Si-ion (Si+) implantation doping for the channel and ohmic contacts. Depletion-mode devices with a gate-connected field plate (FP) achieved a high off-state breakdown voltage of 755 V, a large drain current on/off ratio (ION/IOFF) of over 109, stable high temperature operation at 300°C, and dispersion-free pulsed output characteristics. Bulk Ga2O3 exhibited high gamma-ray tolerance by virtue of the MOSFETs’stable DC characteristics against irradiation, while radiation-induced dielectric damage and interface trap generation limited the overall radiation hardness of these devices. A large thermal resistance of 48 mm·K/W for room temperature operation highlights the pertinence of thermal management to the performance and reliability of Ga2O3 transistors. Low residual carrier density in UID Ga2O3 enabled full channel depletion at zero gate bias for a positive threshold voltage in Si+-implanted enhancement-mode β-Ga2O3 (010) MOSFETs with low series resistance. Despite strong charge trapping effects associated with an unoptimized gate dielectric, a decent ION of 1.4 mA/mm and large ION/IOFF near 106 were achieved. Progress toward vertical Ga2O3 MOSFETs will also be presented.
会議概要(会議名, 開催地, 会期, 主催者等)
内容記述タイプ Other
内容記述 2nd International Workshop on Gallium Oxide and Related Materials
発表年月日
日付 2017-09-12
日付タイプ Issued
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