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  1. 学会発表・講演等
  2. ポスター発表

Creation of spin defects in wide bandgap semiconductors for quantum sensing by particle irradiation

https://repo.qst.go.jp/records/73210
https://repo.qst.go.jp/records/73210
9ac0c537-d94c-47dc-a73d-dda4645392bf
Item type 会議発表用資料 / Presentation(1)
公開日 2019-02-14
タイトル
タイトル Creation of spin defects in wide bandgap semiconductors for quantum sensing by particle irradiation
言語
言語 eng
資源タイプ
資源タイプ識別子 http://purl.org/coar/resource_type/c_c94f
資源タイプ conference object
アクセス権
アクセス権 metadata only access
アクセス権URI http://purl.org/coar/access_right/c_14cb
著者 Ohshima, Takeshi

× Ohshima, Takeshi

WEKO 721556

Ohshima, Takeshi

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Yamazaki, Yuichi

× Yamazaki, Yuichi

WEKO 721557

Yamazaki, Yuichi

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Masuyama, Y.

× Masuyama, Y.

WEKO 721558

Masuyama, Y.

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Onoda, Shinobu

× Onoda, Shinobu

WEKO 721559

Onoda, Shinobu

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Abe, Hiroshi

× Abe, Hiroshi

WEKO 721560

Abe, Hiroshi

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Mizuno, K.

× Mizuno, K.

WEKO 721561

Mizuno, K.

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Ozawa, H.

× Ozawa, H.

WEKO 721562

Ozawa, H.

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Ishiwata, H.

× Ishiwata, H.

WEKO 721563

Ishiwata, H.

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Hatano, Y.

× Hatano, Y.

WEKO 721564

Hatano, Y.

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Iwasaki, T.

× Iwasaki, T.

WEKO 721565

Iwasaki, T.

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Hatano, M.

× Hatano, M.

WEKO 721566

Hatano, M.

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大島 武

× 大島 武

WEKO 721567

en 大島 武

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山崎 雄一

× 山崎 雄一

WEKO 721568

en 山崎 雄一

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小野田 忍

× 小野田 忍

WEKO 721569

en 小野田 忍

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阿部 浩之

× 阿部 浩之

WEKO 721570

en 阿部 浩之

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抄録
内容記述タイプ Abstract
内容記述 Negatively charged nitrogen-vacancy (NV) centers in diamond and negatively charged silicon vacancy (Vsi) in silicon carbide (SiC) are known as spin defects which can be applied to quantum sensing. For quantum sensing, it is important to develop the creation methods of such spin defects effectively, e.g. high concentration for high sensitivity and certain locations for local area sensing. Particle irradiation such as electrons and protons are regarded as a useful method to create spin defects with wide concentration ranges as well as specific locations. We created Vsi in certain locations of SiC pn diodes without the significant degradation of diode characteristics using proton beam writing (PBW) technique. The luminescence properties of VSi was controlled by device operation (current injection by applying forward bias). Optically detected magnetic resonance (ODMR) for VSi in a SiC pn diode was also observed based on a standard photoluminescence technique. For high concentration spin defects, we used irradiation of electron beams with MeV range. Combining NV centers created in diamond by electron irradiation with coplanar waveguide resonator, we developed an optical system with a detection volume of 1.4x10-3 mm3. As a result, we demonstrated AC magnetometry with a sensitivity of 3.6 pT/(Hz)1/2 in which a decoupling pulse sequence, XY16, was applied to extend spin coherence time T2 to 27 times longer than the original value. In the presentation, we will also introduce irradiation techniques that we developed such as high temperature electron irradiation to reduce residual defects and nitrogen ion microbeam irradiation to create NV centers at certain locations in diamond.
会議概要(会議名, 開催地, 会期, 主催者等)
内容記述タイプ Other
内容記述 European Quantum Technology Conference 2019 (EQTC2019)
発表年月日
日付 2019-02-20
日付タイプ Issued
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