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Influence of indium supply on Au-catalyzed InGaAs nanowire growth studied by in situ X-ray diffraction
https://repo.qst.go.jp/records/65939
https://repo.qst.go.jp/records/65939a0d9ab78-d021-4910-8e8a-1dfb3d36abe7
| Item type | 会議発表用資料 / Presentation(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2016-08-16 | |||||
| タイトル | ||||||
| タイトル | Influence of indium supply on Au-catalyzed InGaAs nanowire growth studied by in situ X-ray diffraction | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_c94f | |||||
| 資源タイプ | conference object | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
佐々木, 拓生
× 佐々木, 拓生× 高橋, 正光× 佐々木 拓生× 高橋 正光 |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Influence of indium supply on growth dynamics of Au-catalyzed InGaAs nanowires was studied by in situ X-ray diffraction. We found that supplying indium along with gallium results in an interruption of nanowire growth, and that the nanowires are gradually buried in the layer part of InGaAs. Low temperature growth is effective to avoid this interruption and maintain the nanowire growth. | |||||
| 会議概要（会議名, 開催地, 会期, 主催者等） | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18) | |||||
| 発表年月日 | ||||||
| 日付 | 2016-08-08 | |||||
| 日付タイプ | Issued | |||||
