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Vertical-type two-dimensional hole gas diamond metal oxide semiconductor field-effect transistors
https://repo.qst.go.jp/records/49307
https://repo.qst.go.jp/records/49307ad27cc6b-996f-4d36-950d-6c984c4f753a
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2019-02-18 | |||||
| タイトル | ||||||
| タイトル | Vertical-type two-dimensional hole gas diamond metal oxide semiconductor field-effect transistors | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Oi, Nobutaka
× Oi, Nobutaka× Masafumi Inaba× Okubo, Satoshi× Tsuyuzaki, Ikuto× Kageura, Taisuke× Onoda, Shinobu× Hiraiwa, Atsushi× Kawarada, Hiroshi× 小野田 忍 |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Power semiconductor devices require low on-resistivity and high breakdown voltages simultaneously. Vertical-type metal-oxide-semiconductor field-effect transistors (MOSFETs) meet these requirements, but have been incompleteness in diamond. Here we show vertical-type p-channel diamond MOSFETs with trench structures and drain current densities equivalent to those of n-channel wide bandgap devices for complementary inverters. We use two-dimensional hole gases induced by atomic layer deposited Al2O3 for the channel and drift layers, irrespective of their crystal orientations. The source and gate are on the planar surface, the drift layer is mainly on the sidewall and the drain is the p+ substrate. The maximum drain current density exceeds 200 mA mm−1 at a 12 µm source-drain distance. On/off ratios of over eight orders of magnitude are demonstrated and the drain current reaches the lower measurement limit in the off-state at room temperature using a nitrogen-doped n-type blocking layer formed using ion implantation and epitaxial growth. | |||||
| 書誌情報 |
Scientific Reports 巻 8, 号 1, p. 10660, 発行日 2018-07 |
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| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1038/s41598-018-28837-5 | |||||
