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Characterization of nonradiative recombination centers in proton-irradiated InAs/GaAs quantum dots by two-wavelength-excited photoluminescence
https://repo.qst.go.jp/records/49183
https://repo.qst.go.jp/records/49183ee72e930-33cc-4a75-ab5a-5935113b1847
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2018-09-27 | |||||
| タイトル | ||||||
| タイトル | Characterization of nonradiative recombination centers in proton-irradiated InAs/GaAs quantum dots by two-wavelength-excited photoluminescence | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Dulal, Haque Md.
× Dulal, Haque Md.× Kamata, Norihiko× Sato, Shinichiro× M., Hubbard Seth× 佐藤 真一郎 |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Nonradiative recombination (NRR) centers in as-grown and proton-irradiated InAs/GaAs quantum dot (QD) structures have been studied by twowavelength- excited photoluminescence (PL). The PL intensity quenching of GaAs and QD emissions due to the addition of a below-gap excitation light of 0.80 eV energy indicates the presence of defect levels acting as NRR centers. The method enables us to discuss the distribution of NRR centers in GaAs and/or InAs QD regions by selecting either conduction band excitation (2.33 eV) or intermediate band excitation (1.27 eV). We have found that the densities of NRR centers in GaAs layers and the effect of quenching on GaAs emissions increase monotonically with increasing proton irradiation fluence. The QD emission intensity, however, increases at a moderate fluence of 7E11 protons/cm2 owing to the defect-assisted trapping of electrons into QDs. Further incorporation of NRR centers after 4E12 protons/cm2 fluence quenches the QD-PL intensity below that of an unirradiated sample. |
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| 書誌情報 |
Japanese Journal of Applied Physics 巻 57, 号 092302, p. 1-6, 発行日 2018-08 |
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| 出版者 | ||||||
| 出版者 | The Japan Society of Applied Physics | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.7567/JJAP.57.092302 | |||||
