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  1. 原著論文

Room Temperature Electrical Control of Single Photon Sources at 4H-SiC Surface

https://repo.qst.go.jp/records/49182
https://repo.qst.go.jp/records/49182
c268ec3e-994d-4fb9-b35c-7fab52948e47
Item type 学術雑誌論文 / Journal Article(1)
公開日 2018-09-27
タイトル
タイトル Room Temperature Electrical Control of Single Photon Sources at 4H-SiC Surface
言語
言語 eng
資源タイプ
資源タイプ識別子 http://purl.org/coar/resource_type/c_6501
資源タイプ journal article
アクセス権
アクセス権 metadata only access
アクセス権URI http://purl.org/coar/access_right/c_14cb
著者 Sato, Shinichiro

× Sato, Shinichiro

WEKO 496209

Sato, Shinichiro

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Honda, Tomoya

× Honda, Tomoya

WEKO 496210

Honda, Tomoya

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Makino, Takahiro

× Makino, Takahiro

WEKO 496211

Makino, Takahiro

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Hijikata, Yasuto

× Hijikata, Yasuto

WEKO 496212

Hijikata, Yasuto

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Lee, Sang-Yun

× Lee, Sang-Yun

WEKO 496213

Lee, Sang-Yun

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Ohshima, Takeshi

× Ohshima, Takeshi

WEKO 496214

Ohshima, Takeshi

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佐藤 真一郎

× 佐藤 真一郎

WEKO 496215

en 佐藤 真一郎

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牧野 高紘

× 牧野 高紘

WEKO 496216

en 牧野 高紘

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大島 武

× 大島 武

WEKO 496217

en 大島 武

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内容記述タイプ Abstract
内容記述 Single photon source (SPS) providing nonclassical light states on demand is one of the key technologies for the application of quantum communication and optical quantum computer. In this paper, room temperature electrical control of single photon emission from defects at 4H-SiC surface is presented. Planar-type 4H-SiC p+nn+ diodes are fabricated and defects that act as SPS are formed on the surface of n-type epi-layer by field oxidation process. The photon emission properties of SPSs are investigated using a home-built confocal microscopy. Results show that the electroluminescence (EL) intensity of SPS can be controlled by minority carrier injection of forward bias voltages, while the photoluminescence (PL) intensity of SPS can be controlled by reverse bias voltages. No significant variations due to applied bias voltages are observed in the EL and PL spectra, indicating the defect structure and charge state are unchanged. The PL intensity modulation by switching a reverse bias voltage is also demonstrated.
書誌情報 ACS Photonics

巻 5, 号 8, p. 3159-3165, 発行日 2018-05
出版者
出版者 ACS Publications
DOI
識別子タイプ DOI
関連識別子 10.1021/acsphotonics.8b00375
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