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Double negatively charged carbon vacancy at the h- and k- sites in 4H-SiC: Combined Laplace-DLTS and DFT study
https://repo.qst.go.jp/records/48865
https://repo.qst.go.jp/records/48865e251ef33-2297-4b3d-b68b-4ce5b1bc28d6
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2018-05-08 | |||||
| タイトル | ||||||
| タイトル | Double negatively charged carbon vacancy at the h- and k- sites in 4H-SiC: Combined Laplace-DLTS and DFT study | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Capan, Ivana
× Capan, Ivana× Brodar, Tomislav× Pastuovic, Zeljko× Siegele, Rainer× Ohshima, Takeshi× Sato, Shinichiro× Makino, Takahiro× Snoj, Luka× Radulović, Vladimir× Coutinho, José× J., B. Torres Vitor× Demmouche, Kamel× 大島 武× 佐藤 真一郎× 牧野 高紘 |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | We present results from combined Laplace-Deep Level Transient Spectroscopy (Laplace-DLTS) and density functional theory studies of the carbon vacancy (VC) in n-type 4H-SiC. Using Laplace-DLTS, we were able to distinguish two previously unresolved sub-lattice-inequivalent emissions, causing the broad Z1/2 peak at 290K that is commonly observed by conventional DLTS in n-type 4H-SiC. This peak has two components with activation energies for electron emission of 0.58 eV and 0.65 eV. We compared these results with the acceptor levels of VC obtained by means of hybrid density functional supercell calculations. The calculations support the assignment of the Z1/2 signal to a superposition of emission peaks from double negatively charged VC defects. Taking into account the measured and calculated energy levels, the calculated relative stability of VC in hexagonal (h) and cubic (k) lattice sites, as well as the observed relative amplitude of the Laplace-DLTS peaks, we assign Z1 and Z2 to VC(h) and VC(k), respectively. We also present the preliminary results of DLTS and Laplace-DLTS measurements on deep level defects (ET1 and ET2) introduced by fast neutron irradiation and He ion implantation in 4H-SiC. The origin of ET1 and ET2 is still unclear. |
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| 書誌情報 |
Jounarl of Applied Physics 巻 123, 号 161597, p. 1-6, 発行日 2018-02 |
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| 出版者 | ||||||
| 出版者 | American Institute of Physics | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1063/1.5011124 | |||||
| 関連サイト | ||||||
| 識別子タイプ | URI | |||||
| 関連識別子 | http://aip.scitation.org/doi/10.1063/1.5011124 | |||||
| 関連名称 | http://aip.scitation.org/doi/10.1063/1.5011124 | |||||
