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Strain relaxation and compositional separation during growth of InGaAs/ GaAs(001)
https://repo.qst.go.jp/records/48580
https://repo.qst.go.jp/records/4858036fa8b01-c3c3-424a-a46c-21349b0afd5f
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2018-03-16 | |||||
| タイトル | ||||||
| タイトル | Strain relaxation and compositional separation during growth of InGaAs/ GaAs(001) | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Deki, Ryota
× Deki, Ryota× 佐々木, 拓生× 高橋, 正光× 佐々木 拓生× 高橋 正光 |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Strain relaxation of InxGaAs/GaAs(001) with systematically changed In content between 0.23 and 0.80 has been studied using in situ synchrotron X-ray diffraction during molecular beam epitaxy growth. Correlation between the In composition and the degree of relaxation in the InGaAs films was derived from the reciprocal space maps. While InGaAs with a uniform composition was grown in the regime of the two-dimensional growth, a separation of the In composition was observed for the InGaAs films grown in the Stranski-Krastanov mode. | |||||
| 書誌情報 |
Journal of Crystal Growth 巻 468, p. 241-244, 発行日 2017-06 |
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| 出版者 | ||||||
| 出版者 | Elsevier | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 0022-0248 | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1016/j.jcrysgro.2017.01.028 | |||||
| 関連サイト | ||||||
| 識別子タイプ | URI | |||||
| 関連識別子 | http://www.sciencedirect.com/science/article/pii/S0022024817300362 | |||||
| 関連名称 | http://www.sciencedirect.com/science/article/pii/S0022024817300362 | |||||
