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Stark Tuning and Electrical Charge State Control of Single Divacancies in Silicon Carbide
https://repo.qst.go.jp/records/48511
https://repo.qst.go.jp/records/4851110c4ca0a-b7e2-4f04-984e-eb06f9755da3
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2018-02-15 | |||||
| タイトル | ||||||
| タイトル | Stark Tuning and Electrical Charge State Control of Single Divacancies in Silicon Carbide | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
F., de las Casas Charles
× F., de las Casas Charles× J., Christle David× Ul, Hassan Jawad× Ohshima, Takeshi× T., Son Nguyen× D., Awschlom David× 大島 武 |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Neutrally charged divacancies in silicon carbide (SiC) which are known as paramagnetic color centers, their long coherence times and near-telecom operating wavelengths. However, local strain inhomogeneity can randomly perturb their optical transition frequencies, which degrades the indistinguishability of photons emitted from separate defects and hinders their coupling to optical cavities. In this study, electric fields can be used to tune the optical transition frequencies of single neutral divacancy defects in 4H-SiC over a range of several GHz via the DC Stark effect. The same technique can also control the charge state of the defect on microsecond timescales. Using fluorescence-based charge state detection, it is demonstrated that both 975 and 1130 nm excitation can prepare their neutral charge state with near unity efficiency. | |||||
| 書誌情報 |
Applied Physics Letter 巻 111, 号 26, p. 262403-1-262403-5, 発行日 2017-12 |
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| 出版者 | ||||||
| 出版者 | American Institute of Physics | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1063/1.5004174 | |||||
