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Valence-band electronic structure evolution of graphene oxide upon thermal annealing for optoelectronics
https://repo.qst.go.jp/records/47972
https://repo.qst.go.jp/records/47972af5e74dc-60dc-4470-99e3-b7964cd005a5
Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2017-05-23 | |||||
タイトル | ||||||
タイトル | Valence-band electronic structure evolution of graphene oxide upon thermal annealing for optoelectronics | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
アクセス権 | ||||||
アクセス権 | metadata only access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
著者 |
Yamaguchi, Hisato
× Yamaguchi, Hisato× Ogawa, Shuichi× Watanabe, Daiki× Hozumi, Hideaki× Gao, Yongqian× Eda, Goki× Mattevi, Cecilia× Fujita, Takeshi× Yoshigoe, Akitaka× Ishizuka, Shinji× Adamska, Lyudmyla× Yamada, Takatoshi× M., Dattelbaum Andrew× Gupta, Gautam× K., Doorn Stephen× A., Velizhanin Kirill× Teraoka, Yuden× Chen, Mingwei× Htoon, Han× Chhowalla, Manish× D., Mohite Aditya× Takakuwa, Yuji× 寺岡 有殿 |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | We report valence-band electronic structure evolution of graphene oxide (GO) upon its thermal reduction. The degree of oxygen functionalization was controlled by annealing temperature, and an electronic structure evolution was monitored using real-time ultraviolet photoelectron spectroscopy. We observed a drastic increase in the density of states around the Fermi level upon thermal annealing at 600℃. The result indicates that while there is an apparent bandgap for GO prior to a thermal reduction, the gap closes after an annealing around that temperature. This trend of bandgap closure was correlated with the electrical, chemical, and structural properties to determine a set of GO material properties that is optimal for optoelectronics. The results revealed that annealing at a temperature of 500℃ leads to the desired properties, demonstrated by a uniform and an order of magnitude enhanced photocurrent map of an individual GO sheet compared to an as-synthesized counterpart. | |||||
書誌情報 |
Physica Status Solidi A: Applications and Materials Science 巻 213, 号 9, p. 2380-2386, 発行日 2017-02 |
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出版者 | ||||||
出版者 | John Wiley & Sons Ltd | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 1862-6300 | |||||
DOI | ||||||
識別子タイプ | DOI | |||||
関連識別子 | 10.1002/pssa.201532855 |