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Effects of growth temperature and growth rate on polytypes in gold-catalyzed GaAs nanowires studied by in situ X-ray diffraction
https://repo.qst.go.jp/records/47970
https://repo.qst.go.jp/records/479709f209d3a-ed83-4e82-a1c2-1b5fac15da43
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2017-05-23 | |||||
| タイトル | ||||||
| タイトル | Effects of growth temperature and growth rate on polytypes in gold-catalyzed GaAs nanowires studied by in situ X-ray diffraction | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
高橋, 正光
× 高橋, 正光× 神津, 美和× 佐々木, 拓生× 高橋 正光× 佐々木 拓生 |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | The polytypism of GaAs nanowires was investigated by in situ X-ray diffraction under different growth conditions. The growth of nanowires was found to start with the formation of the zincblende structure, followed by the growth of the wurtzite structure. The observed growth process of nanowires was well reproduced by simulations based on a layer-by-layer nucleation model. At a low growth temperature and a high growth rate, stacking faults were found to be frequently introduced owing to the reduction in energy barrier. As a result, the zincblend and wurtzite segments in nanowires were highly fragmented and the wurtzite structure was formed in the early stage of growth. | |||||
| 書誌情報 |
Japanese Journal of Applied Physics 巻 55, 号 4S, p. 04EJ04, 発行日 2016-02 |
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| 出版者 | ||||||
| 出版者 | JSAP | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.7567/JJAP.55.04EJ04 | |||||
| 関連サイト | ||||||
| 識別子タイプ | URI | |||||
| 関連識別子 | http://iopscience.iop.org/article/10.7567/JJAP.55.04EJ04 | |||||
| 関連名称 | http://iopscience.iop.org/article/10.7567/JJAP.55.04EJ04 | |||||
