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Effective fluorination of single-layer graphene by high-energy ion irradiation through a LiF overlayer
https://repo.qst.go.jp/records/47905
https://repo.qst.go.jp/records/479054bac455d-13a9-4a63-addc-7f373dbea281
Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2017-05-01 | |||||
タイトル | ||||||
タイトル | Effective fluorination of single-layer graphene by high-energy ion irradiation through a LiF overlayer | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
アクセス権 | ||||||
アクセス権 | metadata only access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
著者 |
圓谷, 志郎
× 圓谷, 志郎× 水口, 将輝× 渡辺, 英雄× Yu., Antipina Liubov× パベル, ソロキン× アヴラモフ, パベル× 楢本, 洋× 境, 誠司× 圓谷 志郎× パベル ソロキン× アヴラモフ パベル× 楢本 洋× 境 誠司 |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Graphene proved interesting for nanoelectronics and spintronics, due to the novel properties like quantum nature of electron transport, band-gap tunability and extremely high mobility of charge carriers. It is known that an introduction of lattice imperfection such as vacancies and impurities causes the significant changes in the electronic structure and electron transport property of graphene. Ion irradiation is one of the effective techniques to induce these local atomic structures in graphene. In the present work, we studied the high-energy ion irradiation effect on the graphene-based heterostructure. We demonstrated graphene fluorination by the ion irradiation to the LiF/graphene heterostructure, which will provide a clue to develop a new non-chemical heteroatom doping into graphene. |
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書誌情報 |
RSC Advances (Online Only URL:http://www.rsc.org/advances/) 巻 72, 号 6, p. 68525-68529, 発行日 2017-02 |
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出版者 | ||||||
出版者 | Royal Society of Chemistry | |||||
DOI | ||||||
識別子タイプ | DOI | |||||
関連識別子 | 10.1039/c6ra09631j |