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Change in Characteristics of SiC MOSFETs by Gamma-ray Irradiation at High Temperature
https://repo.qst.go.jp/records/47726
https://repo.qst.go.jp/records/47726677ed51c-e689-4f09-b6b4-43eb9ab51508
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2017-04-20 | |||||
| タイトル | ||||||
| タイトル | Change in Characteristics of SiC MOSFETs by Gamma-ray Irradiation at High Temperature | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Matsuda, Takuma
× Matsuda, Takuma× Yokoseki, T.× Mitomo, Satoshi× Murata, Koichi× Makino, Takahiro× Abe, Hiroshi× Takeyama, Akinori× Onoda, Shinobu× Tanaka, Yuki× Kandori, Mikio× Yoshie, Toru× Hijikata, Yasuto× Oshima, Takeshi× 松田 拓磨× 三友 啓× 村田 航一× 牧野 高紘× 阿部 浩之× 武山 昭憲× 小野田 忍× 大島 武 |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Radiation response of 4H-SiC vertical power Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) was investigated at 150oC up to 10.4 MGy. Until irradiation at 1.2 MGy, the drain current – gate voltage curves of the SiC MOSFETs shifted to the negative voltage side, and the leakage of drain current at gate voltages below threshold voltage increased with increasing absorbed dose. However, no significant change in the electrical characteristics of SiC MOSFETs was observed at doses above 1.2 MGy. For blocking characteristics, there were no degradations of the SiC MOSFETs irradiated at 150oC even after irradiated at 10.4 MGy. | |||||
| 書誌情報 |
Materials Science Forum 巻 858, p. 860-863, 発行日 2016-05 |
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| 出版者 | ||||||
| 出版者 | Trans Tech Publications, Switzerland | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 1662-9752 | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.4028/www.scientific.net/MSF.858.863 | |||||
