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Non-destructive depth analysis of the surface oxide layer on Mg2Si crystals with XPS and XAS
https://repo.qst.go.jp/records/47587
https://repo.qst.go.jp/records/4758752dd7456-9362-4532-9d0f-18831f9f4775
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2016-12-08 | |||||
| タイトル | ||||||
| タイトル | Non-destructive depth analysis of the surface oxide layer on Mg2Si crystals with XPS and XAS | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Esaka, Fumitaka
× Esaka, Fumitaka× Nojima, Takehiro× Udono, Haruhiko× Magara, Masaaki× Yamamoto, Hiroyuki× 山本 博之 |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Depth analysis of the surface oxide layer on a Mg2Si crystal was performed with X-ray photoelectron spectroscopy (XPS) and X-ray absorption spectroscopy (XAS). In XPS, X-rays from synchrotron radiation with the energies between 2100 and 3300 eV were used as the excitation sources for depth analysis. The Si 1s and Mg 1s XPS spectra show the formation of a thinner SiO2-X layer at outermost surface and a thicker MgO layer at lower surface on the Mg2Si. In XAS, total electron yield and partial electron yield (PEY) acquisition modes were used for the measurement of Si K-edge. The PEY spectrum was obtained by detecting electrons with a fixed kinetic energy of 5, 10, 20, 30, 40, or 50 eV. Although the PEY spectrum with electrons of 5 eV shows similar features with the total electron yield spectrum, detection of electrons with 50 eV gives an increase in the ratio of a peak at 1843.7 eV to the peak assigned to Mg2Si. The peak at 1843.7 eV can be assigned to the formation of SiO2-X on the Mg2Si. From XPS and XAS results, it is indicated that a thinner SiO2-X layer at outermost surface and a thicker MgO layer at lower surface are formed at initial oxidation of the Mg2Si. | |||||
| 書誌情報 |
Surface and Interface Analysis 巻 48, 号 7, p. 432-435, 発行日 2016-07 |
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| 出版者 | ||||||
| 出版者 | John Wiley & Sons, Ltd. | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 1096-9918 | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1002/sia.5939 | |||||
