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Applicability of the polyimide films as an SSNTD material
https://repo.qst.go.jp/records/46775
https://repo.qst.go.jp/records/46775a6907375-eaa8-4e3d-808b-cb4e0e971987
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2014-07-16 | |||||
| タイトル | ||||||
| タイトル | Applicability of the polyimide films as an SSNTD material | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Yamauchi, Tomoya
× Yamauchi, Tomoya× Kaifu, Shunsuke× Mori, Yutaka× Kanasaki, Masato× Oda, Keiji× Kodaira, Satoshi× Konishi, Teruaki× Yasuda, Nakahiro× Barillon, Rémi× 小平 聡× 小西 輝昭 |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Track registration properties in polyimide films, KAPTON, for heavy ions have been examined by means of FT-IR spectrometry and the chemical etching in sodium hypochlorite solution. The effective track core size for the loss of C]O and CeNeC composing imide bonds, and diphenyl ethers of CeOeC have been evaluated under the irradiations by Ne, Fe and Xe ions at energies less than 6 MeV/n. On the other hand, the etching property of the polyimide films has been examined in the sodium hypochlorite solution at temperature of 55 C. Before the etchings, the films were exposed to H, C, Ne, Fe and Xe ions, at incident energies below 6 MeV/n. The etch pits are found only on the films exposed to Fe and Xe ions, indicating significant difference on the etch pit size between them. This implies that the polyimide film has charge or energy resolution for these relatively heavy ions. The threshold level of the etchable track registration is inferred to be around 2500 keV/mm. The effective track core radius at this stopping power for the loss of diphenyl ether is 1.6 nm, which is equivalent to the length between the adjacent diphenyl ether bonds in the polyimide chains. Breakings at two adjacent diphenyl ethers in radial direction of latent tracks may produce etchable tracks in KAPTON. | |||||
| 書誌情報 |
Radiation Measurements 巻 50, p. 16-21, 発行日 2013-03 |
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| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 1350-4487 | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | doi:10.1016/j.radmeas.2012.04.013 | |||||
