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内容記述 |
Nitride semiconductors are excellent host materials for rare-earth ions, offering stable narrow-linewidth photon emission that can be electrically and optically controlled at room temperature. These features make them promising candidates for qubits and single-photon sources, which are essential building blocks for quantum computing and quantum communication. In particular, isolated erbium (Er) ions in solids exhibit photon emission in the telecom C-band, where optical fibers have minimal transmission loss. However, the detailed optical properties of Er ions in nitride hosts are not less well understood. In this study, we elucidate the photoluminescence excitation spectra, radiative transition lifetimes, excitation cross sections, and other key optical properties of Er ions implanted into gallium nitride (GaN). We also investigate the enhancement of photon emission achieved through co-implantation with ytterbium (Yb). |
