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Electron irradiation effects on ultra-thin silicon IBC solar cells of varying thickness: Analytical modelling and experimental demonstration of the critical design factors of silicon solar cells for space application
https://repo.qst.go.jp/records/2003323
https://repo.qst.go.jp/records/20033231ed485d9-73eb-4a99-9f0b-5b02eecc4d71
| アイテムタイプ | 学術雑誌論文 / Journal Article(1) | |||||||||||||||||||||||||||
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| 公開日 | 2026-05-20 | |||||||||||||||||||||||||||
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| タイトル | Electron irradiation effects on ultra-thin silicon IBC solar cells of varying thickness: Analytical modelling and experimental demonstration of the critical design factors of silicon solar cells for space application | |||||||||||||||||||||||||||
| 言語 | en | |||||||||||||||||||||||||||
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| 言語 | eng | |||||||||||||||||||||||||||
| 資源タイプ | ||||||||||||||||||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||||||||||||||||||
| 資源タイプ | journal article | |||||||||||||||||||||||||||
| 著者 |
Zhenyu Sun
× Zhenyu Sun
× Li Wang
× Zhuangyi Zhou
× Xiaoxing Lou
× Tetsuya Nakamura
× Mitsuru Imaizumi
× Takeshi Ohshima
× Sato Shinichiro
× Brett Hallam
× Nicholas J. Ekins-Daukes
× Ivan Perez-Wurfl
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| 内容記述タイプ | Abstract | |||||||||||||||||||||||||||
| 内容記述 | In the “Space 2.0” era, space missions demand solar technologies that are lightweight, efficient, and cost-effective. Silicon (Si) solar cells offer a mature, low-cost solution, with back-contact (BC) architectures achieving the highest conversion efficiency among Si-based designs. However, typical terrestrial Si cells with thicknesses of 130–150 μm face limitations in radiation tolerance and mass, both critical for space applications. While thinner designs have demonstrated improved resilience, most studies remain qualitative and lack a quantitative framework—particularly for BC cells, for which the irradiation response remains largely unexplored. To address these gaps, this work investigates ultra-thin Si back-contacted (UTSBC) solar cells as a model system to establish a unified physical framework that quantifies the interplay between absorber thickness, junction location, carrier diffusion length, and surface recombination under electron irradiation, which is architecture-agnostic. We further introduce the concept of a “critical thickness”—a threshold below which radiation-induced performance degradation is significantly suppressed—thereby linking microscopic degradation mechanisms to device-level design rules for radiation-hardened Si photovoltaics in future space applications. | |||||||||||||||||||||||||||
| 書誌情報 |
Solar Energy Materials and Solar Cells 巻 304, 号 114428, p. 1-12, 発行日 2026-05 |
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| 出版者 | Elsevier | |||||||||||||||||||||||||||
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| 識別子タイプ | DOI | |||||||||||||||||||||||||||
| 関連識別子 | 10.1016/j.solmat.2026.114428 | |||||||||||||||||||||||||||
