| アイテムタイプ |
学術雑誌論文 / Journal Article(1) |
| 公開日 |
2026-05-18 |
| タイトル |
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タイトル |
Atomic and electronic structure of ZrO2 film on Si(100) grown by low temperature chemical vapor deposition |
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言語 |
en |
| 言語 |
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言語 |
eng |
| 資源タイプ |
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資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
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資源タイプ |
journal article |
| 著者 |
Entani Shiro
Shigeki Hattori
Mitsunori Honda
Kohda Makoto
Yamamoto Hiroki
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| 抄録 |
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内容記述タイプ |
Abstract |
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内容記述 |
The low-temperature chemical vapor deposition (CVD) of ZrO₂ films have attracted attention due to its potential for integration with a wide range of substrates and applications. In addition, understanding the atomic structure and electronic properties of CVD-grown ZrO₂ films is essential for predicting their physical and chemical behavior. In this study, we developed a custom-designed CVD apparatus and successfully synthesized a ZrO₂ film on a Si substrate at a substrate temperature of 150 °C using tetrakis(ethylmethylamino)zirconium as the precursor. A film thickness of approximately 1–2 nm was achieved after a 30-minute deposition process. Zr K-edge extended X-ray absorption fine structure (EXAFS) analysis revealed that the film exhibits a polycrystalline structure with a Zr–O bond length of 2.16 Å. The electronic structure of the film was investigated using Zr L₃-edge X-ray absorption near-edge structure (XANES), electron energy loss spectroscopy (EELS), and ultraviolet photoelectron spectroscopy (UPS). These measurements showed that the electronic properties of the CVD-grown ZrO₂ film, particularly the valence band structure, are broadly comparable to those of bulk ZrO₂. The results suggest that the ZrO₂ film synthesized by low-temperature CVD can be suitable for use in electronic and optical devices, especially where thermal constraints are a concern. |
| 書誌情報 |
AIP advances
巻 16,
号 5,
p. 055021-1--7,
発行日 2026-05
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| 出版者 |
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出版者 |
AIP Publishing |
| DOI |
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識別子タイプ |
DOI |
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関連識別子 |
10.1063/6.0005054 |
