| アイテムタイプ |
会議発表用資料 / Presentation(1) |
| 公開日 |
2026-04-09 |
| タイトル |
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タイトル |
Detection of luminescence from negatively charge nitrogen vacancy centers excited by electron beam: influence of extrinsic and intrinsic factors |
|
言語 |
en |
| 言語 |
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|
言語 |
eng |
| 資源タイプ |
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資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6670 |
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資源タイプ |
conference poster |
| 著者 |
J. Chen
C. Chikara
J. Inoue
Abe Hiroshi
Ohshima Takeshi
M. Miyakawa
T. Taniguchi
T. Sekiguchi
T. Teraji
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| 抄録 |
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内容記述 |
Negatively charged nitrogen-vacancy (NV-) centers in diamond produce a characteristic optical zero-phonon line (ZPL) at 637 nm. This emission line can be observed under optical excitation (i.e. photoluminescence), but is rarely observed under electron excitation (i.e. cathodoluminescence). Recently, we have reported that low-temperature (80 K) and low energy (5 keV) cathodoluminescence spectroscopy is able to detect emission peak at the ZPL of NV- centers. However, when the NV concentration increases, spectral dip tends to be formed around the ZPL of NV- due to the absorption of NV0 phonon sidebands. In order to learn how to detect and acquire stable luminescence from NV- centers under electron beam excitation, we attempt to clarify the influence from the following two perspectives. One is the extrinsic factor such as the e-beam excitation condition and temperature, and the other is the intrinsic factor of diamond samples (NV concentration and nitrogen concentration). Diamond samples grown using the CVD and HPHT methods with different nitrogen concentrations will be investigated. For instance, figure 1 shows the decrease in the CL intensity of the 637 nm ZPL of NV- centers in a CVD diamond sample when the accelerating voltage of e-beam is increased from 5 to 20 kV at 19 K. This suggests that weak excitation and low temperature are important for observing luminescence from NV- centers under electron beam excitation. |
| 会議概要（会議名, 開催地, 会期, 主催者等） |
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内容記述 |
18th Internal Conference on New Diamond and Nano Carbons: NDNC2025 |
| 発表年月日 |
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日付 |
2025-05-12 |
