| アイテムタイプ |
会議発表用資料 / Presentation(1) |
| 公開日 |
2026-04-09 |
| タイトル |
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|
タイトル |
Vacancy meditated nitrogen mobile in diamond crystal by high-fluence electron beam irradiation |
|
言語 |
en |
| 言語 |
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|
言語 |
eng |
| 資源タイプ |
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資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6670 |
|
資源タイプ |
conference poster |
| 著者 |
C. Shinei
Masuyama Yuta
Abe Hiroshi
M. Miyakawa
T. Taniguchi
Ohshima Takeshi
T. Teraji
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| 抄録 |
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内容記述 |
Negatively charged nitrogen vacancy (NV-) centers is paramagnetic defect with S = 1 in diamond crystal and have strong spin-dependent photo-luminescence intensity that is promising for high-sensitive quantum sensors. Under condition that external noise is eliminated, high density NV- centers contribute to high shot-noise sensitivity which is standard quantum limit. Here, NV- centers were typically formed by electron beam irradiation (EBI) and subsequent annealing. In diamond crystals used in practical sensing, the reported typical EBI fluence was up to ~ 1.0×10^18 e/cm^2 leading to NV- center density of a few ppm. Higher fluence EBI is required to form higher density NV- center. Under the high-fluence EBI conditions, so far, the detail of atomistic picture about point defect formation including NV- center has not been investigated. In this study, we employed EBI over 1.0×10^18 e/cm^2 for HPHT diamond crystal and investigated the dependence of defect density on EBI fluence. |
| 会議概要（会議名, 開催地, 会期, 主催者等） |
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内容記述 |
18th Internal Conference on New Diamond and Nano Carbons: NDNC2025 |
| 発表年月日 |
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日付 |
2025-05-12 |
