| アイテムタイプ |
学術雑誌論文 / Journal Article(1) |
| 公開日 |
2026-03-19 |
| タイトル |
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タイトル |
Charge-transfer-induced depth redistribution of surface spin states in the topological insulator Sb2Te3 |
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言語 |
en |
| 言語 |
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言語 |
eng |
| 資源タイプ |
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資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
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資源タイプ |
journal article |
| 著者 |
Ryu Yukawa
Tohoku Univ.
Yuki Higuchi
Univ. of Osaka
Yuichiro Toichi
Univ. of Osaka
Ryota Itaya
Univ. of Osaka
Kyosuke Nomura
Univ. of Osaka
Kitamura Miho
Kenichi Ozawa
KEK
Hiroshi Kumigashira
Tohoku Univ.
Kazuyuki Sakamoto
Univ. of Osaka
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| 抄録 |
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内容記述タイプ |
Abstract |
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内容記述 |
The spatial distribution of interfacial spin states is a critical factor governing the efficiency of spin-injection and spin-detection in spintronic devices. In this study, we use angle-resolved photoemission spectroscopy (ARPES) to investigate the evolution of the two types of spin-polarized surface states of the topological insulator Sb2Te3—the topological surface states and the Rashba-type surface states (RSS)—upon electron doping. Our detailed analysis reveals that the electronic structure undergoes a modification that goes beyond a simple rigid band shift. Specifically, we observe that the electron doping reduces the ARPES intensity of one of the spin-split RSS branches. Calculations based on the density functional theory reveal that the decrease in intensity results from a change in the depth distribution of the probability densities. These results demonstrate that charge transfer can redistribute the near-surface weight of spin-polarized states along the surface normal, providing a depth degree of freedom for interfacial spins. |
| 書誌情報 |
ACS Nano
巻 2026,
号 B113,
p. 075412-1-075412-7,
発行日 2026-01
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| 出版者 |
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出版者 |
American Chemical Society |
| DOI |
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識別子タイプ |
DOI |
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関連識別子 |
10.1103/jf8w-95k3 |
