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In situ measurement of a gain stage of the SiC JFET operational amplifier under gamma ray irradiation
https://repo.qst.go.jp/records/2002338
https://repo.qst.go.jp/records/200233807cf8b89-2733-4e3a-8733-895f743dba7f
| アイテムタイプ | 会議発表用資料 / Presentation(1) | |||||||||||||||||||||||||||||||
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| 公開日 | 2025-09-24 | |||||||||||||||||||||||||||||||
| タイトル | ||||||||||||||||||||||||||||||||
| タイトル | In situ measurement of a gain stage of the SiC JFET operational amplifier under gamma ray irradiation | |||||||||||||||||||||||||||||||
| 言語 | en | |||||||||||||||||||||||||||||||
| 言語 | ||||||||||||||||||||||||||||||||
| 言語 | eng | |||||||||||||||||||||||||||||||
| 資源タイプ | ||||||||||||||||||||||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_c94f | |||||||||||||||||||||||||||||||
| 資源タイプ | conference presentation | |||||||||||||||||||||||||||||||
| 著者 |
M. Yamamoto
× M. Yamamoto
× T. Amamiya
× A. Takeyama
× R. Hirose
× M. Yuzuriha
× K. Nakayama
× H. Umezawa
× T. Kuroiwa
× T. Sato
× T. Makino
× T. Ohshima
× S. Kuroki
× Y. Tanaka
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| 抄録 | ||||||||||||||||||||||||||||||||
| 内容記述 | Research and development of SiC integrated circuits for harsh environments, such as nuclear reactors and space, has recently attracted considerable attention. In this study, we irradiated the gain stage of a SiC JFET operational amplifier during operation and evaluated the effects. The results showed that no abnormal noise appeared in the output signal, and the voltage gain remained unchanged compared to before irradiation. On the other hand, the output offset voltage decreased by approximately 2 V within a few minutes after the start of gamma-rays irradiation. | |||||||||||||||||||||||||||||||
| 会議概要（会議名, 開催地, 会期, 主催者等） | ||||||||||||||||||||||||||||||||
| 内容記述 | The 22nd International Conference on Silicon Carbide and Related Materials (ICSCRM 2025) | |||||||||||||||||||||||||||||||
| 発表年月日 | ||||||||||||||||||||||||||||||||
| 日付 | 2025-09-16 | |||||||||||||||||||||||||||||||
