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内容記述 |
Electronics that can operate stably even in harsh environments such as high temperatures and high radiation are in demand in advanced scientific fields and industries. 4H-SiC has a wide band gap and high tolerance to high temperatures and radiation. Therefore, by using 4H-SiC, it is possible to fabricate integrated circuits that can operate stably even in such harsh environments. Memory devices are one of the essential elements of integrated circuits, and D-type flip-flop circuits are important ones. In this research, 4H-SiC CMOS D-type flip-flop circuits were designed and demonstrated. Fabricated D-type flip-flop consisted of a transmission gate and a CMOS inverter. It had one signal input, one signal output, and a clock signal input terminal. In the operation, source power voltage was set to VDD = 16 V, and the high level of the signal was also set to 16 V. When clock signal was set to 1 kHz, output signals responded to the input signal and the clock signal correctly and kept its state until next clock. Rising time of the output is longer than the falling time. This is thought to be due to the drain current of p channel MOSFET is smaller than that of n channel ones. |
