|
内容記述 |
Extreme ultraviolet (EUV) lithography, which utilizes 13.5 nm wavelength light for imaging, has recently been adopted for high-volume semiconductor manufacturing. Currently, the light source used in EUV lithography relies on incoherent EUV emission from laser-produced tin plasma (LPP) with pulse durations on the order of nanoseconds, as long as that of the driver laser. In contrast, free-electron lasers (FELs) offer coherent light with wavelengths as short as angstroms, enabling new possibilities for advanced nanolithography. Notably, FEL pulse durations are three to six orders of magnitude shorter than those of LPP sources, raising important questions about their effects on optics and resist materials. To address these challenges, we initiated a benchmark study at the National Institutes for Quantum Science and Technology (QST). This study focuses on developing ultrafast coherent EUV sources using compact laser-driven techniques, including high harmonic generation (HHG) and laser-plasma soft X-ray lasers (SXRLs). In this report, we discuss recent advances of the development of high repetition rate soft x-ray laser using tape target. |
