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  1. 原著論文

Ion irradiation induced microstructural development of polycrystalline double-thick-walled silicon carbide nanotubes

https://repo.qst.go.jp/records/2001766
https://repo.qst.go.jp/records/2001766
667fc005-58a0-4dae-b5d3-7e02f6962623
アイテムタイプ 学術雑誌論文 / Journal Article(1)
公開日 2025-12-16
タイトル
タイトル Ion irradiation induced microstructural development of polycrystalline double-thick-walled silicon carbide nanotubes
言語 en
言語
言語 eng
資源タイプ
資源タイプ識別子 http://purl.org/coar/resource_type/c_6501
資源タイプ journal article
著者 Taguchi Tomitsugu

× Taguchi Tomitsugu

Taguchi Tomitsugu

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Yamamoto Shunya

× Yamamoto Shunya

Yamamoto Shunya

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抄録
内容記述タイプ Abstract
内容記述 In this study, ion irradiation induced microstructural development of olycrystalline double-thick-walled (DTW) silicon carbide (SiC) nanotubes are investigated. In-situ transmission electron microscopy (TEM) observations of two kinds of olycrystalline DTW SiC nanotubes with a wide and narrow spacing between the outer and inner nanotubes are carried out under the ion irradiation with 200-keV Si+ ions at room temperature. The critical doses of amorphization for both DTW SiC nanotubes are larger than those of SiC bulk materials in the previous tudies. Amorphous DTW SiC nanotubes are successfully synthesized for the first time via the ion irradiation of both polycrystalline DTW SiC nanotubes. From in-situ TEM observation results, all of outer, inner diameters and length of both inner and outer nanotubes increase with increasing the irradiation dose till around complete amorphization of SiC crystals, and then decrease. After ion irradiation of more than 20 dpa, polycrystalline DTW SiC nanotubes with a wide and narrow spacing between the outer and inner nanotubes are transformed to amorphous SiC nanotube and SiC nanowire, respectively.
書誌情報 e-Journal of Surface Science and Nanotechnology (e-JSSNT)

巻 23, 号 3, p. 314-322, 発行日 2025-07
出版者
出版者 The Japan Society of Vacuum and Surface Science
DOI
識別子タイプ DOI
関連識別子 10.1380/ejssnt.2025-040
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