| アイテムタイプ |
学術雑誌論文 / Journal Article(1) |
| 公開日 |
2025-07-24 |
| タイトル |
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タイトル |
Radiation tolerance analysis of space solar cells under increased irradiance conditions |
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言語 |
en |
| 言語 |
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言語 |
eng |
| 資源タイプ |
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資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
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資源タイプ |
journal article |
| 著者 |
Yoshiyuki Murakami
Teppei Okumura
Tetsuya Nakamura
Daisuke Sato
Sato Shinichiro
Yamasaki Shota
Nagasawa Naotsugu
Ohshima Takeshi
Taishi Sumita
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| 抄録 |
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内容記述タイプ |
Abstract |
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内容記述 |
In this study, we obtained the electrical performance of concentrator photovoltaics (CPV) using InGaP/GaAs/Ge triple-junction solar cells before
and after high-energy particle irradiation to examine the effects of solar concentration on radiation tolerance. The conversion efficiency before
radiation exposure increased in proportion to the received solar irradiance mainly because of the solar concentration effect of the open-circuit voltage (Voc). Additionally, our experimental results revealed that the solar concentration effect of Voc was enhanced after radiation exposure, which mitigated Voc degradation. To investigate the solar concentration effect on Voc in detail, the recombination current dependencies of the external luminescence efficiency (hext) of InGaP and GaAs single-junction (1J) cells were measured before and after radiation exposure. It was found that the hext of InGaP 1J cells after radiation exposure increased with increasing recombination current, which is considered to suppress the degradation of the Voc of the CPV. These findings demonstrate the significant advantages of CPV for space applications. |
| 書誌情報 |
Japanese Journal of Applied Physics
巻 64,
号 05SP31,
p. 1-6,
発行日 2025-05
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| 出版者 |
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出版者 |
IOP Publishing |
| DOI |
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識別子タイプ |
DOI |
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関連識別子 |
10.35848/1347-4065/add539 |
