| アイテムタイプ |
学術雑誌論文 / Journal Article(1) |
| 公開日 |
2025-07-11 |
| タイトル |
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タイトル |
Single-Layer Graphene Oxide Film Grown on α-Al2O3(0001) for Use as an Adsorbent |
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言語 |
en |
| 言語 |
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|
言語 |
eng |
| 資源タイプ |
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資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
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資源タイプ |
journal article |
| 著者 |
Entani Shiro
Honda Mitsunori
Takizawa Masaru
Kohda Makoto
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| 抄録 |
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内容記述タイプ |
Abstract |
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内容記述 |
Graphene oxide (GO) is expected to be one of the most promising adsorbents for metal ions, including radioactive nuclides in aqueous solutions. Large-area and single-layer graphene oxide (SLGO) grown on ?-Al2O3(0001) was used as a model structure of GO because the aggregation and re-stacking of the GO sheets prevent the adequate analysis of the adsorption state. The SLGO film was obtained by oxidizing monolayer graphene grown by metal-free CVD on the ?-Al2O3(0001) surface, and the adsorption state was determined by surface analytical techniques. It was clarified that Cs adsorbs on oxygen functional groups by substituting to H atoms from carboxyl and hydroxy groups. It is also estimated that the weight adsorption capacity of SLGO in the 1.0 mol/l-Cs aqueous solution is as much as approximately 70wt%. It has been demonstrated that GO has great potential to be a promising adsorbent for Cs in aqueous solution. |
| 書誌情報 |
Beilstein Journal of Nanotechnology
巻 16,
p. 1082-1087,
発行日 2025-07
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| DOI |
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識別子タイプ |
DOI |
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関連識別子 |
10.3762/bjnano.16.79 |
