| アイテムタイプ |
学術雑誌論文 / Journal Article(1) |
| 公開日 |
2025-03-27 |
| タイトル |
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タイトル |
Coherent photoelectrical readout of single spins in silicon carbide at room temperature |
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言語 |
en |
| 言語 |
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言語 |
eng |
| 資源タイプ |
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資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
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資源タイプ |
journal article |
| 著者 |
Tetsuri Nishikawa
Naoya Morioka
Abe Hiroshi
Koichi Murata
Kazuki Okajima
Ohshima Takeshi
Hidekazu Tsuchida
Norikazu Mizuochi
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| 抄録 |
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内容記述タイプ |
Abstract |
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内容記述 |
Establishing a robust and integratable quantum system capable of sensitive qubit readout at ambient conditions is a key challenge for developing prevalent quantum technologies, including quantum networks and quantum sensing. Paramagnetic colour centres in wide bandgap semiconductors provide optical single-spin detection, yet realising efficient electrical readout technology in scalable material will unchain developing integrated ambient quantum electronics. Here, we demonstrate photoelectrical detection of single spins in silicon carbide, a material amenable to large-scale processing and electronic integration. With efficient photocarrier collection, we achieve a 1.7?2 times better signal-to-noise ratio for single spins of silicon vacancies with electrical detection than with optical detection suffering from saturating fluorescence and internal reflection. Based on our photoionisation dynamics study, further improvement would be expected with enhanced ionisation. We also observe single-defect-like features in the photocurrent image where photoluminescence is absent in the spectrum range of silicon vacancies. The efficient electrical readout in the mature material platform holds promise for developing integrated quantum devices. |
| 書誌情報 |
Nature Communications
発行日 2025-03
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| 出版者 |
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出版者 |
The Springer Nature |
