| アイテムタイプ |
学術雑誌論文 / Journal Article(1) |
| 公開日 |
2025-01-28 |
| タイトル |
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|
タイトル |
An extraordinarily low-energy threshold of less than 60 keV for ion track formation in silicon |
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言語 |
en |
| 言語 |
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|
言語 |
eng |
| 資源タイプ |
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資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
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資源タイプ |
journal article |
| 著者 |
Amekura Hiroshi
Narumi Kazumasa
Chiba Atsuya
Hirano Yoshimi
Yamada Keisuke
Yamamoto Shunya
Saito Yuuichi
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| 抄録 |
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内容記述タイプ |
Abstract |
|
内容記述 |
The impingement of a C60 cluster ion upon a solid can realize the temporospatially correlated injection of sixty C atoms to the solid at the same time and place with a molecular dimension of 0.7 nm in diameter. This could result in ion track formation that differs from that of conventional monatomic ion irradiation. Although no ion tracks have been observed in Si even under high-energy 3.6-GeV monatomic U ion irradiation, certain tracks have been found in Si under low-energy 1-MeV C60 ion irradiation. Here, we investigated track formation under an irradiation of less than 1 MeV: (i) With a decrease in energy, the diameters and lengths of the tracks decreased; however, the length decreased more steeply than the diameter. (ii) Although the tracks were fuzzily perceived down to 60-keV irradiation, no tracks were observed under 30-keV irradiation, except for an extended damage zone. Furthermore, we observed (iii) track formation below the electronic stopping threshold, and (iv) track length extension due to “the acceleration effect” of cluster-ion irradiation at low energies. (v) Finally, the approximated linearity between the track volume and C60 energy is discussed. |
| 書誌情報 |
Materialia
巻 39,
p. 102317,
発行日 2025-01
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| 出版者 |
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出版者 |
Elsevier |
| DOI |
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識別子タイプ |
DOI |
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関連識別子 |
10.1016/j.mtla.2024.102317 |
