| アイテムタイプ |
学術雑誌論文 / Journal Article(1) |
| 公開日 |
2024-11-29 |
| タイトル |
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|
タイトル |
4H-SiC Radiation Hardened Static Random Access Memory |
|
言語 |
en |
| 言語 |
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|
言語 |
eng |
| 資源タイプ |
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|
資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
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資源タイプ |
journal article |
| 著者 |
Shin-Ichiro Kuroki
Toya Kai
Taisei Ozaki
Kazutoshi Kojima
Takeyama Akinori
Ohshima Takeshi
Yasunori Tanaka
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| 抄録 |
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内容記述タイプ |
Abstract |
|
内容記述 |
4H-SiC static random-access memory (SRAM) was suggested and demonstrated for extreme-environment applications. The 4H-SiC SRAMs show the proper memory states with high static noise margins (SNMs). After exposure to a significant gamma-ray radiation of 810 kGy, the SRAMs continued to function effectively, maintaining positive SNM values necessary for proper memory operation. After the gamma-ray radiation, the SRAM operation was tested at high temperature, and it continued to function normally even at temperatures as high as 500°C. |
| 書誌情報 |
IEEE Electron Device Letters
巻 45,
号 12,
p. 2280-2283,
発行日 2024-12
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| 出版者 |
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出版者 |
IEEE |
| ISSN |
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収録物識別子タイプ |
ISSN |
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収録物識別子 |
1558-0563 |
| DOI |
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|
識別子タイプ |
DOI |
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関連識別子 |
10.1109/LED.2024.3466612 |
