| アイテムタイプ |
学術雑誌論文 / Journal Article(1) |
| 公開日 |
2024-08-19 |
| タイトル |
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タイトル |
4H-SiC 64-Pixels CMOS Image Sensors With 3T/4T-APS Arrays |
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言語 |
en |
| 言語 |
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|
言語 |
eng |
| 資源タイプ |
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資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
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資源タイプ |
journal article |
| 著者 |
Tatsuya Meguro
Masayuki Tsutsumi
Takeyama Akinori
Ohshima Takeshi
Yasunori Tanaka
Shin-Ichiro Kuroki
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| 抄録 |
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内容記述タイプ |
Abstract |
|
内容記述 |
For radiation-hardened CMOS image sensors (CIS), 4H-silicon carbide (SiC) 64-pixel array CMOS image sensors were developed, and real time imaging with an operation frequency of 30 Hz was demonstrated. Two types of pixel arrays with a 3-transistor active pixel sensor (3T-APS) and a 4-transistor active pixel sensor (4T-APS) were fabricated with SiC MOSFETs, UV photodiodes and 3-layered Al interconnections. The SiC pixel arrays were combined with peripheral circuits and an optical lens, and SiC 64-pixel CMOS image sensors with 3T/4T-APS arrays were developed. |
| 書誌情報 |
Applied Physics Express
巻 17,
号 8,
p. 081005-1-081005-5,
発行日 2024-08
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| 出版者 |
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出版者 |
IOP Publishing |
| DOI |
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識別子タイプ |
DOI |
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関連識別子 |
10.35848/1882-0786/ad665f |
