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Room temperature optical coupling of neodymium ions to photonic crystal L3 cavity in gallium nitride semiconductor
https://repo.qst.go.jp/records/2001253
https://repo.qst.go.jp/records/20012539b85aea7-2366-4b0e-b5d0-25dd08ef78b0
| アイテムタイプ | 学術雑誌論文 / Journal Article(1) | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|
| 公開日 | 2024-08-29 | |||||||||
| タイトル | ||||||||||
| タイトル | Room temperature optical coupling of neodymium ions to photonic crystal L3 cavity in gallium nitride semiconductor | |||||||||
| 言語 | en | |||||||||
| 言語 | ||||||||||
| 言語 | eng | |||||||||
| 資源タイプ | ||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||
| 資源タイプ | journal article | |||||||||
| 著者 |
Sato Shinichiro
× Sato Shinichiro
× Takao Oto
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| 抄録 | ||||||||||
| 内容記述タイプ | Abstract | |||||||||
| 内容記述 | We demonstrate the optical coupling of implanted neodymium (Nd) ions in a photonic crystal (PhC)-L3 cavity on GaN at RT. The structure of the PhC-L3 cavity is designed by the electromagnetic field simulation to enhance the 4F3/2?4I9/2 and 4F3/2?4I11/2 transitions (916 and 1107 nm) in Nd3+. The highest enhancement ratio of 20-fold is achieved under our measurement conditions by the enhancement of spontaneous emission rate due to the Purcell effect in addition to the improvement of light collection efficiency. These results pave the way for the development of Ln-doped GaN based quantum light?matter interface and nanophotonics. | |||||||||
| 書誌情報 |
Applied Physics Express 巻 17, 号 072001, 発行日 2024-07 |
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| 出版者 | ||||||||||
| 出版者 | IOP Publishing | |||||||||
| DOI | ||||||||||
| 識別子タイプ | DOI | |||||||||
| 関連識別子 | 10.35848/1882-0786/ad5bbd | |||||||||
