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内容記述 |
Ultra-thin solar cells display high intrinsic radiation tolerance, making them interesting for space applications. This study investigates the dependence of the open-circuit voltage degradation and overall current?voltage behavior of devices with 80 nm thick GaAs absorber layers, on their absorber layer doping concentration and the radiation type used to introduce damage. The radiation types used were 1 MeV electrons and 20 keV, 100 keV, and 1 MeV protons. It is shown that the open-circuit voltage degradation rate increases with absorber layer doping concentration. This is linked to the increase in trap-assisted tunneling enhancement of the recombination rate, facilitated by the
increase in electric field strength in the absorber layer with doping concentration. Trap-assisted tunneling is also found to contribute to the high local ideality factors observed in these devices, exceeding values of 2, and to be responsible for the trend of an increasing ideality factor with doping concentration. The significant role of trap-assisted tunneling in the devices is established through fitting of dark current?voltage data using a custom recombination?generation model. An open-circuit voltage degradation rate and local ideality factor curves are also shown to vary with radiation type, despite accounting for their differences in non-ionizing energy loss. This is corroborated by corresponding
trends in carrier lifetime damage constants, extracted from the fitting of the dark current?voltage curves. This suggests that the introduction or behavior of radiation damage differs between ultra-thin and conventional, thicker solar cells, where non-ionizing energy loss theory tends to be reliable, especially over the studied proton energy range. |
