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  1. 原著論文

Spin-State Control of Shallow Single NV Centers in Hydrogen-Terminated Diamond

https://repo.qst.go.jp/records/2001082
https://repo.qst.go.jp/records/2001082
ccc4e386-2506-4486-a6d9-19b7a2892913
アイテムタイプ 学術雑誌論文 / Journal Article(1)
公開日 2024-03-01
タイトル
タイトル Spin-State Control of Shallow Single NV Centers in Hydrogen-Terminated Diamond
言語 en
言語
言語 eng
資源タイプ
資源タイプ識別子 http://purl.org/coar/resource_type/c_6501
資源タイプ journal article
著者 Taisuke Kageura

× Taisuke Kageura

Taisuke Kageura

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Yosuke Sasama

× Yosuke Sasama

Yosuke Sasama

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Tokuyuki Teraji

× Tokuyuki Teraji

Tokuyuki Teraji

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Kenji Watanabe

× Kenji Watanabe

Kenji Watanabe

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Takashi Taniguchi

× Takashi Taniguchi

Takashi Taniguchi

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Yamada Keisuke

× Yamada Keisuke

Yamada Keisuke

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Kimura Kosuke

× Kimura Kosuke

Kimura Kosuke

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Onoda Shinobu

× Onoda Shinobu

Onoda Shinobu

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Yamaguchi Takahide

× Yamaguchi Takahide

Yamaguchi Takahide

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内容記述タイプ Abstract
内容記述 The ability to control the charge and spin states of nitrogen-vacancy (NV) centers near the diamond surface is of pivotal importance for quantum applications. Hydrogen-terminated diamond is promising for long spin coherence times and ease of controlling the charge states due to the low density of surface defects. However, it has so far been challenging to create negatively charged single NV centers with controllable spin states beneath a hydrogen-terminated surface because atmospheric adsorbates that act as acceptors induce surface holes. In this study, we optically detected the magnetic resonance of shallow single NV centers in hydrogen-terminated diamond through precise control of the nitrogen implantation fluence. Furthermore, we found that the probability of detecting the resonance was enhanced by reducing the surface acceptor density through passivation of the hydrogen-terminated surface with hexagonal boron nitride without air exposure. This control method opens up new opportunities for using NV centers in quantum applications.
書誌情報 ACS Applied Materials & Interfaces

発行日 2024-02
DOI
識別子タイプ DOI
関連識別子 10.1021/acsami.3c17544
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