| アイテムタイプ |
学術雑誌論文 / Journal Article(1) |
| 公開日 |
2024-02-09 |
| タイトル |
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タイトル |
Radiation Response of Large-Area 4H-SiC Schottky Barrier Diodes |
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言語 |
en |
| 言語 |
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言語 |
eng |
| 資源タイプ |
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資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
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資源タイプ |
journal article |
| 著者 |
Robert Bernat
Tihomir Kne?evi?
Vladimir Radulovi?
Luka Snoj
Makino Takahiro
Ohshima Takeshi
Ivana Capan
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| 抄録 |
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内容記述タイプ |
Abstract |
|
内容記述 |
We report on the effects of large-area 4H-SiC Schottky barrier diodes on the radiation response to ionizing particles. Two different diode areas were compared: 1 mm × 1 mm and 5 mm × 5 mm. 6LiF and 10B4C films, which were placed on top of the diodes, were used as thermal neutron converters. We achieved a thermal neutron efficiency of 5.02% with a 6LiF thermal neutron converter, which is one of the highest efficiencies reported to date. In addition, a temperature-dependent radiation response to alpha particles was presented. Neutron irradiations were performed in a JSI TRIGA dry chamber and an Am-241 wide-area alpha source was used for testing the alpha response of the 4H-SiC Schottky barrier diodes. |
| 書誌情報 |
Materials
巻 16,
p. 2202,
発行日 2023-03
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| DOI |
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識別子タイプ |
DOI |
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関連識別子 |
10.3390/ma16062202 |
