| アイテムタイプ |
学術雑誌論文 / Journal Article(1) |
| 公開日 |
2024-01-25 |
| タイトル |
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タイトル |
Energy levels of carbon dangling-bond center (PbC center) at 4H-SiC(0001)/SiO2 interface |
|
言語 |
en |
| 言語 |
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|
言語 |
eng |
| 資源タイプ |
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資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
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資源タイプ |
journal article |
| 著者 |
Mitsuru Sometani
Yusuke Nishiya
Ren Kondo
Rei Inohana
Hongyu Zeng
Hirohisa Hirai
Dai Okamoto
Matsushita Yuichiro
Takahide Umeda
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| 抄録 |
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内容記述タイプ |
Abstract |
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内容記述 |
The electric properties of the carbon dangling-bond (PbC) center at a thermally oxidized 4H-SiC(0001)/SiO2 interface are investigated. We experimentally and theoretically determine the energy levels of the associated interface states to estimate the impacts of the PbC center on power device operations. By combining electrically detected magnetic resonance spectroscopy and capacitance?voltage measurements, the two PbC electronic levels [(0/?) and (+/0)] are determined as ?1.2 and 0.6 eV from the valence band maximum, respectively. The effective correlation energy of the PbC center is 0.6 eV, which is 1.5 times larger than that of the silicon dangling-bond (Pb) center at Si/SiO2 interfaces. Our first-principles calculations confirm that the electronic levels of PbC are similar to experimental values. Considering these energy levels, the PbC center must impact both p- and n-channel devices, which is closely related to previously reported channel features. |
| 書誌情報 |
APL Materials
巻 11,
号 11,
p. 111119-1-111119-5,
発行日 2023-11
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