| アイテムタイプ |
学術雑誌論文 / Journal Article(1) |
| 公開日 |
2024-01-25 |
| タイトル |
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タイトル |
Highly Sensitive Temperature Sensing Using the Silicon Vacancy in Silicon Carbide by Simultaneously Resonated Optically Detected Magnetic Resonance |
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言語 |
ja |
| 言語 |
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言語 |
jpn |
| 資源タイプ |
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資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
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資源タイプ |
journal article |
| 著者 |
山崎 雄一
増山 雄太
児島 一聡
大島 武
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| 抄録 |
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内容記述タイプ |
Abstract |
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内容記述 |
Quantum sensors using silicon vacancy (VSi) in silicon carbide (SiC) are expected to be capable of directly measuring inside SiC devices. It is a serious problem that we have to employ the excited state (ES) of VSi with very low temperature sensitivity for quantum sensing due to there being no temperature sensitivity for the ground state (GS). Here, we propose a temperature measurement protocol, simultaneously resonated optically detected magnetic resonance (SRODMR), based on the modulation of the GS ODMR response resulting from simultaneous resonance of both GS and ES. This protocol diverts part of the GS ODMR contrast to temperature measurement, and in principle, temperature can be measured at an equivalent signal intensity to that of GS ODMR. SRODMR improves signal intensity by 1 order of magnitude compared with the conventional method (ES ODMR), leading to temperature measurements with a smaller error. |
| 書誌情報 |
PHYSICAL REVIEW APPLIED
巻 20,
号 3,
p. L031001-1-L031001-6,
発行日 2024-01
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| DOI |
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識別子タイプ |
DOI |
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関連識別子 |
10.1103/PhysRevApplied.20.L031001 |
