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内容記述 |
Lanthanide (Ln)-implanted gallium nitride (GaN) semiconductors have a variety of potential applications as light-emitting devices and quantum light sources, but their optical properties are not well understood. In this study, we investigate the room temperature optical properties of praseodymium (Pr) ion implanted single-crystal GaN and their changes upon ultrahigh pressure annealing (UHPA) up to 1480 ?C. Photoluminescence (PL) spectra, luminescence transition lifetime, and excitation cross section of the implanted Pr ions are analyzed. In addition, the recovery of implantation-induced damage and the thermal diffusion of implanted Pr ions by UHPA are investigated by X-ray diffraction, Raman spectroscopy, and secondary ion mass spectrometry. The results show that the implantation damage is recovered by annealing at temperatures above 1200 ?C, but Pr ions
thermally diffuse to the surface as the annealing temperature increases. The annealing temperature at which a maximum PL intensity is obtained increases with increasing the implantation dose. However, the PL intensity decreases in all cases after annealing at 1480 ?C, indicating that a quenching factor is dominant in this temperature range. |
