WEKO3
アイテム
Three-temperature model for silicon damage process
https://repo.qst.go.jp/records/2000859
https://repo.qst.go.jp/records/200085946eee49c-c585-4e63-b669-6024375aacd9
| アイテムタイプ | 学術雑誌論文 / Journal Article(1) | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|
| 公開日 | 2025-04-11 | |||||||||
| タイトル | ||||||||||
| タイトル | Three-temperature model for silicon damage process | |||||||||
| 言語 | en | |||||||||
| 言語 | ||||||||||
| 言語 | eng | |||||||||
| 資源タイプ | ||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||
| 資源タイプ | journal article | |||||||||
| 著者 |
Prachi Venkat
× Prachi Venkat
× Otobe Tomohito
|
|||||||||
| 抄録 | ||||||||||
| 内容記述タイプ | Abstract | |||||||||
| 内容記述 | Review of laser excitation and damage in silicon using Three-Temperature model is presented. 3TM formulation is presented, along with the numerical model and the key difference from previously used two-temperature models. Damage thresholds calculated using 3TM are compared with the experimental data to understand damage mechanisms. Parametric dependence of thresholds is also presented. | |||||||||
| 書誌情報 |
Journal of Japan Laser Processing Society 発行日 2024-02 |
|||||||||
| 出版者 | ||||||||||
| 出版者 | Japan Laser Processing Society (JLPS) | |||||||||
