| アイテムタイプ |
学術雑誌論文 / Journal Article(1) |
| 公開日 |
2025-01-08 |
| タイトル |
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タイトル |
Influence of Gate Depletion Layer Width on Radiation Resistance of Silicon Carbide Junction Field-Effect Transistors |
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言語 |
en |
| 言語 |
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|
言語 |
eng |
| 資源タイプ |
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資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
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資源タイプ |
journal article |
| 著者 |
Takeyama Akinori
Makino Takahiro
Yasunori Tanaka
Shin-Ichiro Kuroki
Ohshima Takeshi
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| 抄録 |
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内容記述タイプ |
Abstract |
|
内容記述 |
Silicon carbide junction field-effect transistors (SiC JFETs) are promising candidates as devices applicable to radiation conditions, such as the decommissioning of nuclear facilities or the space environment. We investigate the origin of the threshold voltage (Vth) shift and hysteresis of differently structured SiC JFETs. A large positive Vth shift and hysteresis are observed for a depletion-type JFET with a larger depletion layer width. With changing the sweep range of the gate voltage and depletion width, the Vth shift was positively proportional to the difference between the channel depth and depletion width (channel depth?gate depletion width). By illuminating the sub-band
gap light, the Vth of the irradiated depletion JFETs recovers close to nonirradiated ones, while a smaller shift and hysteresis are observed for the enhancement type with a narrower width. It can be interpreted that positive charges generated in a gate depletion layer cause a positive Vth shift. When they are swept out from the depletion layer and trapped in the channel, this gives rise to a further Vth shift and hysteresis in gamma-irradiated SiC JFETs. |
| 書誌情報 |
Quantum Beam Science
巻 7,
号 4,
p. 31-1-31-10,
発行日 2023-11
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| 出版者 |
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出版者 |
MDPI |
| ISSN |
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収録物識別子タイプ |
ISSN |
|
収録物識別子 |
2412-382X |
| DOI |
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識別子タイプ |
DOI |
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関連識別子 |
10.3390/qubs7040031 |
