| アイテムタイプ |
学術雑誌論文 / Journal Article(1) |
| 公開日 |
2024-12-19 |
| タイトル |
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タイトル |
Robustness of semimetallic transport properties of TaAs against off-stoichiometric disorder |
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言語 |
en |
| 言語 |
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言語 |
eng |
| 資源タイプ |
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資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
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資源タイプ |
journal article |
| 著者 |
Kawasuso Atsuo
Suda Masayuki
Murakawa Hiroshi
Komada M.
Suzuki Chihiro
Amada Haruyo
Michishio Koji
Maekawa Masaki
Miyashita Atsumi
Seko Noriaki
Yamamoto Shunya
Oshima Nagayasu
Seki Shuhei
Hanasaki N.
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| 抄録 |
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内容記述タイプ |
Abstract |
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内容記述 |
TaAs single crystals were grown by a standard chemical vapor transport method. The single-crystallinity and homogeneous distribution of elements were confirmed by transmission electron microscope and x-ray diffraction observations. Positron annihilation measurements revealed that the atomic vacancy concentration was kept below 1E-5 at.%. However, inductively coupled plasma analysis showed an As-deficient (7?9 at.%) off-stoichiometry. First-principles calculations implied that the off-stoichiometry could be compensated for with excess Ta antisite defects, thereby inducing metallic states. Nevertheless, excellent semimetallic transport properties of a well-suppressed carrier density (<1E+18 cm^-3), ultrahigh carrier mobility (>1E+6 cm^2/V/s), and large transverse magnetoresistance (.200 000% at 9 T) with the quantum oscillation were obtained at 1.7 K. This indicated the robustness of semimetallic transport properties against the off-stoichiometric disorder and the quenching of metallic conduction associated with excess Ta atoms. The negative longitudinal magnetoresistance, which is considered evidence of a Weyl semimetal (chiral anomaly), was not observed. These data were discussed with theoretical calculations. |
| 書誌情報 |
Journal of Applied Physics
巻 133,
p. 223903-1-223903-6,
発行日 2023-06
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| 出版者 |
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出版者 |
American Institute of Physics |
| ISSN |
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収録物識別子タイプ |
ISSN |
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収録物識別子 |
1089-7550 |
| DOI |
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識別子タイプ |
DOI |
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関連識別子 |
10.1063/5.0147663 |