| アイテムタイプ |
学術雑誌論文 / Journal Article(1) |
| 公開日 |
2024-12-11 |
| タイトル |
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タイトル |
Charge pumping electrically detected magnetic resonance of silicon carbide power transistors |
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言語 |
en |
| 言語 |
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言語 |
eng |
| 資源タイプ |
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資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
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資源タイプ |
journal article |
| 著者 |
C. T.-K. Lew
V. K. Sewani
Ohshima Takeshi
J. C. McCallum
B. C. Johnson
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| 抄録 |
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内容記述タイプ |
Abstract |
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内容記述 |
Silicon carbide (SiC) power devices are becoming central components in high voltage electronics. However, defects at interfaces and in the bulk continue to severely impact their reliability and performance. Here, we develop a charge pumping method to characterize SiC/SiO2 interface defects in fully fabricated commercial SiC power metal?oxide?semiconductor field-effect transistors (MOSFETs). The method is then used to address spin states at the SiC/SiO2 interface via charge pumping electrically detected magnetic resonance (CP-EDMR). We apply these methods to investigate the power MOSFET after electron irradiation over a dose range of 1013 1017 cm2. We finally discuss
CP-EDMR as a technique to interrogate spins during device operation for real-time monitoring of the device quality, performance, and degradation and as a probe for local magnetic fields. |
| 書誌情報 |
Journal of Applied Physics
巻 134,
p. 055703-1-055703-7,
発行日 2023-08
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| 出版者 |
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出版者 |
AIP publishing |
| ISSN |
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収録物識別子タイプ |
ISSN |
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収録物識別子 |
1089-7550 |
| DOI |
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識別子タイプ |
DOI |
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関連識別子 |
10.1063/5.0167650 |
