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  1. 原著論文

Optically detected magnetic resonance of silicon vacancies in 4H-SiC at elevated temperatures toward magnetic sensing under harsh environments

https://repo.qst.go.jp/records/2000663
https://repo.qst.go.jp/records/2000663
b7989124-7e56-40a2-8b30-f76b442a6eaf
アイテムタイプ 学術雑誌論文 / Journal Article(1)
公開日 2024-09-06
タイトル
タイトル Optically detected magnetic resonance of silicon vacancies in 4H-SiC at elevated temperatures toward magnetic sensing under harsh environments
言語 en
言語
言語 eng
資源タイプ
資源タイプ識別子 http://purl.org/coar/resource_type/c_6501
資源タイプ journal article
著者 Motoki Shu

× Motoki Shu

Motoki Shu

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Sato Shinichiro

× Sato Shinichiro

Sato Shinichiro

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Saiki Seiichi

× Saiki Seiichi

Saiki Seiichi

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Masuyama Yuta

× Masuyama Yuta

Masuyama Yuta

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Yamazaki Yuichi

× Yamazaki Yuichi

Yamazaki Yuichi

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Ohshima Takeshi

× Ohshima Takeshi

Ohshima Takeshi

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Koichi Murata

× Koichi Murata

Koichi Murata

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Hidekazu Tsuchida

× Hidekazu Tsuchida

Hidekazu Tsuchida

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Yasuto Hijikata

× Yasuto Hijikata

Yasuto Hijikata

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抄録
内容記述タイプ Abstract
内容記述 Negatively charged silicon vacancy (VSi?) defects in silicon carbide are expected to be used for magnetic sensors under harsh environments,
such as space and underground due to their structural stability and potential for high-fidelity spin manipulation at high temperatures. To realize VSi? based magnetic sensors operating at high temperatures, the temperature dependence of optically detected magnetic resonance (ODMR) in the ground states of VSi? defects, which is the basic principle of magnetic sensing, should be systematically understood. In this work, we demonstrate the potential of VSi? magnetic sensors up to at least 591 K by showing the ODMR spectra with different temperatures. Furthermore, the resonance frequency of the ground level was independent of temperature, indicating the potential for calibration-
free magnetic sensors in temperature-varying environments. We also characterize the concentration of VSi? defects formed by electron irradiation and clarify the relationship of magnetic sensing sensitivity to VSi? concentration and find that the sensing sensitivity increases linearly with VSi? concentration up to at least 6.0 × 1016 cm?3. The magnetic sensitivity at a temperature above 549 K was reduced by half as compared to that at 300 K. The results pave the way for the use of a highly sensitive VSi?-based magnetic sensor under harsh environments.
書誌情報 Journal of Applied Physics

巻 133, 号 15, p. 154402, 発行日 2023-04
出版者
出版者 AIP Publishing
ISSN
収録物識別子タイプ ISSN
収録物識別子 1089-7550
DOI
識別子タイプ DOI
関連識別子 10.1063/5.0139801
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