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High-intensity single-pulse extraction using a laser-activated GaAs reflective switch for a terahertz free-electron laser
https://repo.qst.go.jp/records/2000558
https://repo.qst.go.jp/records/2000558d575c78b-d360-4f4f-b4fc-33c0a203caf8
| アイテムタイプ | 学術雑誌論文 / Journal Article(1) | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|
| 公開日 | 2024-08-08 | |||||||||
| タイトル | ||||||||||
| タイトル | High-intensity single-pulse extraction using a laser-activated GaAs reflective switch for a terahertz free-electron laser | |||||||||
| 言語 | en | |||||||||
| 言語 | ||||||||||
| 言語 | eng | |||||||||
| 資源タイプ | ||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||
| 資源タイプ | journal article | |||||||||
| 著者 |
Kawase Keigo
× Kawase Keigo
× Goro Isoyama
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| 抄録 | ||||||||||
| 内容記述タイプ | Abstract | |||||||||
| 内容記述 | Single-pulse extraction from a terahertz (THz) pulse train is demonstrated for a free-electron laser oscillator using the laser-activated semiconductor switching technique with gallium arsenide (GaAs). Using a GaAs wafer as the switching substrate and a titanium sapphire laser (Ti:sapphire laser), a single THz pulse can be extracted with a high contrast from the pulse train at intervals of 37 ns in a simple experimental setup due to a short decay time of the electron?hole plasma. For a single THz pulse with a duration of a few to a few tens of picoseconds and a nominal wavelength of 70 um, we achieve an extracted single pulse energy of 76 uJ. | |||||||||
| 書誌情報 |
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 巻 1056, p. 168618, 発行日 2023-08 |
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| 出版者 | ||||||||||
| 出版者 | Elsevier | |||||||||
| ISSN | ||||||||||
| 収録物識別子タイプ | ISSN | |||||||||
| 収録物識別子 | 0168-9002 | |||||||||
| DOI | ||||||||||
| 識別子タイプ | DOI | |||||||||
| 関連識別子 | 10.1016/j.nima.2023.168618 | |||||||||
